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Presently a lot of efforts are devoted to the investigation of newtwo-dimensional magnetic materials, which are considered as promising for therealization of the future electronics and spintronics devices. However, theutilization of these materials in different junctions requires complicatedprocessing that in many cases leads to unwanted parasitic effects influencingthe performance of the junctions. Here, we propose the new elegant approach forthe realization of the "one-material"-based magnetic tunnel junction. Theseveral layers of 2D van der Waals MnPX3 (X: S, Se), which is insulatingantiferromagnet in its ground state, are used and the effect of the appliedexternal electric filed leads to the half-metallic ferromagnetic states for theoutermost layers of the MnPX3 stack. The rich states diagram of such magnetictunnel junction permits to precisely control its tunneling conductivity. Therealized "one-material"-based magnetic tunnel junction allows to avoid alleffects connected with the lattice mismatches and carriers scattering effectsat the materials interfaces, giving high perspectives for the application ofsuch systems in electronics and spintronics.

Realization of the electric-field driven "one-material"-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)