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Two-dimensional (2D) multiferroics have been casted great attention owing totheir promising prospects for miniaturized electronic and memory devices.Here,we proposed a highly stable 2D multiferroic, VOF monolayer, which is anintrinsic ferromagnetic half semiconductor with large spin polarization ~2$\mu_{B}/V$ atom and a significant uniaxial magnetic anisotropy along a-axis(410 $\mu eV/V$ atom). Meanwhile, it shows excellent ferroelectricity with alarge spontaneous polarization 32.7 $\mu C/cm^{2}$ and a moderate energybarrier (~43 meV/atom) between two ferroelectric states, which can be ascribedto the Jahn-Teller distortion.Moreover, VOF monolayer harbors an ultra-largenegative Poisson's ratio in the in-plane direction (~-0.34). The Curietemperature evaluated from the Monte Carlo simulations based on the Ising modelis about 215 K, which can be enhanced room temperature under -4% compressivebiaxial strain.The combination of ferromagnetism and ferroelectricity in theVOF monolayer could provide a promising platform for future study ofmultiferroic effects and next-generation multifunctional nanoelectronic deviceapplications.

Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer