English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Anti-ThCr$_2$Si$_2$ type $RE_2$O$_2$Sb ($RE$ = rare earth) with Sb square nethas shown insulating conduction so far. Here we report the synthesis ofLa$_2$O$_2$Sb epitaxial thin films for the first time by multilayer solid-phaseepitaxy. The valence state of Sb was about -2 evaluated from X-rayphotoemission spectroscopy measurement, and the indirect band gap of 0.17 eVwas observed. The La$_2$O$_2$Sb epitaxial thin film showed unexpectedly highelectrical conduction as a narrow gap semiconductor, whose resistivity at roomtemperature was approximately ten-thousand-fold lower than that ofLa$_2$O$_2$Sb bulk polycrystal, attributed to increased carrier mobilityprobably due to suppressed Sb dimerization.

High electrical conduction of Sb square net in anti-ThCr$_2$Si$_2$ type La$_2$O$_2$Sb thin film grown by multilayer solid-phase epitaxy