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A pressure-induced coupled structural–electronic transition of SnS 2  was disclosed by high-pressure Raman scattering and electrical conductivity measurement at ∼30.0 GPa under different hydrostatic environments.

Pressure-induced coupled structural–electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa

Pressure-induced coupled structural–electronic transition in SnS₂ under different hydrostatic environments up to 39.7 GPa