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The formation of nanowire-like structures during epitaxial growth of Gd 2 O 3  on Si(001) at high temperatures is investigated. The results are discussed by means of physical models.

Formation of self-assembled Gd2O3nanowire-like structures during epitaxial growth on Si(001)

Formation of self-assembled Gd₂O₃nanowire-like structures during epitaxial growth on Si(001)