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Radio frequency sputtering by argon ions on a target consisting of tungsten disulphide can create a single layer of the compound on a 4′′ Si-wafer with one W atom per two S atoms when including hydrogen sulphide in the sputtering atmosphere.

Wafer-sized WS2 monolayer deposition by sputtering

Wafer-sized WS₂ monolayer deposition by sputtering