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Silicon nanostructuring imparts unique material properties includingantireflectivity, antifogging, anti-icing, self-cleaning, and/or antimicrobialactivity. To tune these properties however, a good control over features sizeand shape is essential. Here, a versatile fabrication process is presented toachieve tailored silicon nanostructures (thin/thick pillars,sharp/truncated/re-entrant cones), of pitch down to ~50 nm, and high-aspectratio (>10). The approach relies on pre-assembled block copolymer (BCP)micelles and their direct transfer into a glass hard mask of an arbitrarythickness, now enabled by our recently reported regenerative secondary masklithography. During this pattern transfer, not only the mask diameter can bedecreased but also uniquely increased; constituting the first method to achievesuch tunability without necessitating a different molecular weight BCP.Consequently, the hard mask modulation (height, diameter) advances theflexibility in attainable inter-pillar spacing, aspect ratios, and re-entrantprofiles (= glass on silicon). Combined with adjusted silicon etch conditions,the morphology of nanopatterns can be highly customized. The process controland scalability enable uniform patterning of a 6-inch wafer which is verifiedthrough cross-wafer excellent antireflectivity (<5%) and water-repellency(advancing contact angle 158{\deg}; hysteresis 1{\deg}). It is envisioned theimplementation of this approach to silicon nanostructuring to be far-reaching,facilitating fundamental studies and targeting applications spanning solarpanels, antifogging/antibacterial surfaces, sensing, amongst many others.

A route to engineered high aspect-ratio silicon nanostructures through regenerative secondary mask lithography