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Atomically thin materials, like semiconducting transition metaldichalcogenides, are highly sensitive to the environment. This opens up anopportunity to externally control their properties by changing theirsurroundings. In this work, high-quality van der Waals heterostructuresassembled from hBN-encapsulated monolayer MoS$_2$ are studied with the aid ofphotoluminescence, photoluminescence excitation, and reflectance contrastexperiments. We demonstrate that carrier concentration in MoS$_2$ monolayers,arising from charge transfer from impurities in the substrate, can besignificantly tuned within one order of magnitude by the modification of thebottom hBN flake thickness. The studied structures, characterized by spectrallines approaching the narrow homogeneously broadened limit enabled observationsof subtle optical and spin-valley properties of excitonic complexes. Ourresults allowed us to resolve three optically-active negatively chargedexcitons in MoS$_2$ monolayers, which are assigned to the intravalley singlet,intervalley singlet, and intervalley triplet states.

Exposing the trion's fine structure by controlling the carrier concentration in hBN-encapsulated MoS$_2$