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The lateral resolution of a double-pass Kelvin probe force microscopy system is estimated using 12 nm gap electrodes. The electric fields at the source contact of organic thin film transistors fabricated by stencil or e-beam lithography are compared.

nanoscale advances

Experimental determination of the lateral resolution of surface electric potential measurements by Kelvin probe force microscopy using biased electrodes separated by a nanoscale gap and application to thin-film transistors