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The bulk band structure of the topological insulator \sbte~ is investigatedby angle-resolved photoemission spectroscopy. Of particular interest is thedispersion of the uppermost valence band with respect to the topologicalsurface state Dirac point. The valence band maximum has been calculated to beeither near the Brillouin zone centre or in a low-symmetry position in the$\bar{\Gamma}-\bar{M}$ azimuthal direction. In order to observe the full energyrange of the valence band, the strongly p-doped crystals are counter-doped bysurface alkali adsorption. The data show that that the absolute valence bandmaximum is likely to be found at the bulk $\Gamma$ point and predictions of alow-symmetry position with an energy higher than the surface Dirac point can beruled out.

Bulk band structure of Sb$_2$Te$_3$ determined by angle-resolved photoemission spectroscopy