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Diverse resistive switching behaviors are observed in the Pt/HfAlO x /TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

rsc advances

Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO<sub>2</sub>-based resistive switching memory for neuromorphic applications

Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications

Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO₂-based resistive switching memory for neuromorphic applications