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NiO alloyed with aluminum, Ni 1−x Al x O, is analyzed in terms of its stoichiometry, electronic and transport properties, as well as interfacial band alignment with Si to evaluate its potential use as a hole transport layer (HTL) in p–i–n type solar cells.

Optimized Ni1−xAlxO hole transport layer for silicon solar cells

Optimized Ni_1−xAl_xO hole transport layer for silicon solar cells