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An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.

An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer