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Ternary HfTiO and TiAlO films and quaternary HfTiAlO films prepared with different stoichiometric ratios  via  atomic layer deposition were deposited on Si substrates. HfTiAlO possesses more excellent interface performance and electrical properties than HfTiO and TiAlO.

rsc advances

A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates