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The efficient integration of transition metal dichalcogenides (TMDs) into thecurrent electronic device technology requires mastering the techniques ofeffective tuning of their optoelectronic properties. Specifically, controllabledoping is essential. For conventional bulk semiconductors, ion implantation isthe most developed method offering stable and tunable doping. In this work, wedemonstrate n-type doping in MoSe2 flakes realized by low-energy ionimplantation of Cl+ ions followed by millisecond-range flash lamp annealing(FLA). We further show that FLA for 3 ms with a peak temperature of about 1000{\deg}C is enough to recrystallize implanted MoSe2. The Cl distribution infew-layer-thick MoSe2 is measured by secondary ion mass spectrometry. Anincrease in the electron concentration with increasing Cl fluence is determinedfrom the softening and red shift of the Raman-active A_1g phonon mode due tothe Fano effect. The electrical measurements confirm the n-type doping ofCl-implanted MoSe2. A comparison of the results of our density functionaltheory calculations and experimental temperature-dependent micro-Ramanspectroscopy data indicates that Cl atoms are incorporated into the atomicnetwork of MoSe2 as substitutional donor impurities.

Chlorine doping of MoSe2 flakes by ion implantation