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Quantum dots (QDs) made from semiconductors are among the most promisingplatforms for the developments of quantum computing and simulation chips, andhave advantages over other platforms in high density integration and incompatibility to the standard semiconductor chip fabrication technology.However, development of a highly tunable semiconductor multiple QD system stillremains as a major challenge. Here, we demonstrate realization of a highlytunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAsnanowire with fine finger gate technique. The QQD is studied by electrontransport measurements in the linear response regime. Characteristictwo-dimensional charge stability diagrams containing four groups of resonantcurrent lines of different slopes are found for the QQD. It is shown that thesecurrent lines can be individually assigned as arising from resonant electrontransport through the energy levels of different QDs. Benefited from theexcellent gate tunability, we also demonstrate tuning of the QQD to regimeswhere the energy levels of two QDs, three QDs and all the four QDs areenergetically on resonance, respectively, with the fermi level of source anddrain contacts. A capacitance network model is developed for the linear QQD andthe simulated charge stability diagrams based on the model show good agreementswith the experiments. Our work presents a solid experimental evidence thatnarrow bandgap semiconductor nanowires multiple QDs could be used as aversatile platform to achieve integrated qubits for quantum computing and toperform quantum simulations for complex many-body systems.

Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire