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Tin sulfide promises very interesting properties such as a high opticalabsorption coefficient and a small band gap, while being less toxic compared toother metal chalcogenides. However, the limitations in growing atomically thinstructures of tin sulfide hinder the experimental realization of theseproperties. Due to the flexibility of the colloidal synthesis, it is possibleto synthesize very thin and at the same time large nanosheets. Electricaltransport measurements show that these nanosheets can function as field-effecttransistors with high on/off ratio and p-type behavior. The temperaturedependency of the charge transport reveals that defects in the crystal areresponsible for the formation of holes as majority carriers. Duringillumination with circularly polarized light, these crystals generate ahelicity dependent photocurrent at zero-volt bias, since their symmetry isbroken by asymmetric interfaces (substrate and vacuum). Further, the observedcircular photogalvanic effect shows a pronounced in-plane anisotropy, with ahigher photocurrent along the armchair direction, originating from the higherabsorption coefficient in this direction. Our new insights show the potentialof tin sulfide for new functionalities in electronics and optoelectronics, forinstance as polarization sensors.

Anisotropic circular photogalvanic effect in colloidal tin sulfide nanosheets