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Josephson junctions based on InAs semiconducting nanowires and Nbsuperconducting electrodes are fabricated in-situ by a special shadowevaporation scheme for the superconductor electrode. Compared to other metallicsuperconductors such as Al, Nb has the advantage of a larger superconductinggap which allows operation at higher temperatures and magnetic fields. Ourjunctions are fabricated by shadow evaporation of Nb on pairs of InAs nanowiresgrown selectively on two adjacent tilted Si (111) facets and crossing eachother at a small distance. The upper wire relative to the deposition sourceacts as a shadow mask determining the gap of the superconducting electrodes onthe lower nanowire. Electron microscopy measurements show that the fullyin-situ fabrication method gives a clean InAs/Nb interface. A clear Josephsonsupercurrent is observed in the current-voltage characteristics, which can becontrolled by a bottom gate. The excess current of 0.68 indicates a highjunction transparency. Under microwave radiation, pronounced integer Shapirosteps are observed suggesting a sinusoidal current-phase relation. Owing to thelarge critical field of Nb, the Josephson supercurrent can be maintained tomagnetic fields exceeding 1 T. Our results show that in-situ prepared Nb/InAsnanowire contacts are very interesting candidates for superconducting quantumcircuits requiring large magnetic fields.

Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation