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The Schottky barrier of a metal-semiconductor junction is one of the keyquantities affecting the charge transport in a transistor. The Schottky barrierheight depends on several factors, such as work function difference, localatomic configuration in the interface, and impurity doping. We show that alsothe presence of interface states at 2D metal-semiconductor junctions can giverise to a large renormalization of the effective Schottky barrier determinedfrom the temperature dependence of the current. We investigate the chargetransport in n- and p-doped monolayer MoTe$_2$ 1T'-1H junctions using ab-initioquantum transport calculations. The Schottky barriers are extracted both fromthe projected density of states and the transmission spectrum, and bysimulating the IT-characteristic and applying the thermionic emission model. Wefind interface states originating from the metallic 1T' phase rather than thesemiconducting 1H phase in contrast to the phenomenon of Fermi level pinning.Furthermore, we find that these interface states mediate large tunnelingcurrents which dominates the charge transport and can lower the effectivebarrier to a value of only 55 meV.

Schottky barrier lowering due to interface states in 2D heterophase devices