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Low-frequency noise (LFN) variability in graphene transistors (GFETs) is forthe first time researched in this work. LFN from an adequate statistical sampleof long-channel solution-gated single-layer GFETs is measured in a wide rangeof operating conditions while a physics-based analytical model is derived thataccounts for the bias dependence of LFN variance with remarkable performance.It is theoretically proved and experimentally validated that LFN deviations inGFETs stem from physical mechanisms that generate LFN. Thus, carrier number DNdue to trapping/detrapping process and mobility fluctuations Dm which are themain causes of LFN, define its variability likewise as its mean value. DNaccounts for an M-shape of normalized LFN variance versus gate bias with aminimum at the charge neutrality point (CNP) as it was the case for normalizedLFN mean value while Dm contributes only near the CNP for both variance andmean value. Trap statistical nature is experimentally shown to differ fromclassical Poisson distribution at silicon-oxide devices, and this is probablycaused by electrolyte interface in GFETs under study. Overall, GFET technologydevelopment is still in a premature stage which might cause pivotalinconsistencies affecting the scaling laws in GFETs of the same process.

Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs