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Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories.

Integration of highly anisotropic multiferroic BaTiO3–Fe nanocomposite thin films on Si towards device applications

Integration of highly anisotropic multiferroic BaTiO₃–Fe nanocomposite thin films on Si towards device applications