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Carrier mobility extraction is easily influenced by contact resistance, especially in transistors with a high carrier mobility and a short channel length, which would obscure the investigation into charge transport in organic field-effect transistors (OFETs). Here, we perfunctorily observe a positive carrier mobility–temperature relationship (∂μ/∂T > 0) and a temperature-independent carrier mobility (∂μ/∂T = 0) in OFETs based on less- and highly-crystalline DNTT bulk films, respectively, while their room-temperature carrier mobilities are almost identical. The difference in the temperature–carrier mobility dependence is attributed to the influence of access resistance while the active channels at the semiconductor/dielectric interface were deposited by the same process of different evaporation rates, which leads to different contact resistances tuned by the DNTT molecular packing in the c-axis. Therefore, it will be beneficial for investigating the charge transport of organic semiconductors by eliminating the influence of access resistance in staggered OFETs.

Effect of access resistance on the experimentally measured temperature–carrier mobility dependence in highly-crystalline DNTT-based transistors