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Ferroelectric-oxide memristors show more prominent advantages, such as ultra-fast reading and writing speed and extremely low energy consumption. However, the origin of the resistive-switching of ferroelectric memristors has been controversial.

Origin of resistive-switching behaviors of chemical solution deposition-derived BiFeO3 thin-film memristors

Origin of resistive-switching behaviors of chemical solution deposition-derived BiFeO₃ thin-film memristors