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Process-structure-transport relationships in low-temperature-processed, blade-coated In 2 O 3  transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm 2  V −1  s −1  is achieved at ≈220 °C.

Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors

Role of the electronically-active amorphous state in low-temperature processed In₂O₃ thin-film transistors