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Recent theory has demonstrated that the value of the electron-phonon couplingstrength $\lambda$ can be extracted directly from the thermal attenuation(Debye-Waller factor) of Helium atom scattering reflectivity. This theory ishere extended to multivalley semimetal systems and applied to the case ofgraphene on different metal substrates and graphite. It is shown that $\lambda$rapidly increases for decreasing graphene-substrate binding strength. Twodifferent calculational models are considered which produce qualitativelysimilar results for the dependence of $\lambda$ on binding strength. Thesemodels predict, respectively, values of $\lambda_{HAS} = 0.89$ and 0.32 for ahypothetical flat free-standing single-layer graphene with cyclic boundaryconditions. The method is suitable for analysis and characterization of notonly the graphene overlayers considered here, but also other layered systemssuch as twisted graphene bilayers.

The Electron-Phonon Coupling Constant for Single-Layer Graphene on Metal Substrates Determined from He Atom Scattering