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Transition metal dichalcogenides (TMDs) are van der Waals layered materialswith sizable and tunable bandgaps, offering promising platforms fortwo-dimensional electronics and optoelectronics. To this end, the bottleneck ishow to acquire high-quality single crystals in a facile and efficient manner.As one of the most widely employed method of single-crystal growth,conventional chemical vapor transport (CVT) generally encountered problemsincluding the excess nucleation that leads to small crystal clusters and slowgrowth rate. To address these issues, a seed crystal is introduced to suppressthe nucleation and an inner tube is adopted as both a separator and a flowrestrictor, favoring the growth of large-size and high-quality TMD singlecrystals successfully. Three examples are presented, the effective growth ofmillimeter-sized MoSe2 and MoTe2 single crystals, and the greatly shortenedgrowth period for PtSe2 single crystal, all of which are synthesized in highquality according to detailed characterizations. The mechanism of seeded CVT isdiscussed. Furthermore, a phototransistor based on exfoliated multi-layeredMoSe2 displays excellent photoresponse in ambient conditions, and considerablyrapid rise and fall time of 110 and 125 us are obtained. This work paves theway for developing a facile and versatile method to synthesize high-quality TMDsingle crystals in laboratory, which could serve as favorable functionalmaterials for potential low-dimensional optoelectronics.

Seeded growth of high-quality transition metal dichalcogenide single crystals via chemical vapor transport