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In recent years, stretchable electronics have attracted great attention because of their broad application prospects such as in the field of wearable electronics, skin-like electronics, medical transplantation and human-machine interaction. Intrinsically stretchable transistors have advantages in many aspects. However, integration of intrinsically stretchable layers to achieve stretchable transistors is still challenging. In this work, we combine the excellent electrical and mechanical properties of carbon nanotubes with excellent dielectric and mechanical properties of styrene-ethylene-butylene-styrene (SEBS) to realize intrinsically stretchable thin film transistors (TFTs). This is the first time that all the intrinsically stretchable components have been combined to realize multiple stretchable TFTs in a batch by photolithography-based process. In this process, a plasma resistant layer has been introduced to protect the SEBS dielectric from being damaged during the etching process so that the integration can be achieved. The highly stretchable transistors show a high carrier mobility of up to 10.45 cm 2 V -1 s -1 . The mobility maintains 2.01 cm 2 V -1 s -1 even after the transistors are stretched by over 50% for more than 500 times. Moreover, the transistors have been scaled to channel length and width of 56 μm and 20 μm, respectively, which have a higher integration level. The stretchable transistors have light transmittance of up to 60% in the visible range. The proposed method provides an optional solution to large-scale integration for stretchable electronics.

rsc advances

Intrinsically stretchable all-carbon-nanotube transistors with styrene–ethylene–butylene–styrene as gate dielectrics integrated by photolithography-based process