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Organometal halide perovskite photodetectors have recently drawn significant attention due to their excellent potential to perform as broadband photodetectors. However, the photoresponse in the ultraviolet (UV) spectrum can be improved by introducing wide bandgap semiconductors. In this work, we report on a methylammonium lead iodide/p-type gallium nitride (MAPI/p-GaN) heterojunction photodetector. We demonstrate that the device is capable of detecting in the UV region by p-GaN being hybridized with MAPI. We further investigate different symmetric and asymmetric metal-electrode contacts to enhance the device performance including the response time. The asymmetric electrode configuration is found to be the most optimal configuration which results in high photoresponse (photo-responsivity is 55 mA W -1 and fall time &lt; 80 ms). As the light illumination occurs through the GaN side, its presence ultimately reduces MAPI degradation due to efficient absorption of the UV photons by GaN film.

Optimized performance III-nitride-perovskite-based heterojunction photodetector via asymmetric electrode configuration