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An Mg x Zn 1−x O/ZnO quantum well (QW) structure, with various barrier (Mg x Zn 1−x O layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system.

Barrier thickness dependence of MgxZn1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode

Barrier thickness dependence of Mg_xZn_1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode