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CuIn  x  Ga 1- x  Se 2 (CIGS) nanowires were synthesized for the first time through an in situ cation exchange reaction by using CuInSe 2 (CIS) nanowires as a template material and Ga-OLA complexes as the Ga source. These CIGS nanowires maintain nearly the same morphology as CIS nanowires, and the Ga/In ratio can be controlled through adjusting the concentration of Ga-OLA complexes. The characteristics of adjustable band gap and highly effective light-absorbances have been achieved for these CIGS nanowires. The light-absorbing layer in photovoltaic devices (PVs) can be assembled by employing CIGS nanowires as a solar-energy material for enhancing the photovoltaic response. The highest power conversion efficiency of solar thin film semiconductors is more than 20%, achieved by the Cu(In  x  Ga 1- x  )Se 2 (CIGS) thin-film solar cells. Therefore, these CIGS nanowires have a great potential to be utilized as light absorber materials for high efficiency single nanowire solar cells and to generate bulk heterojunction devices.

Cation exchange synthesis of CuInxGa1−xSe2 nanowires and their implementation in photovoltaic devices

Cation exchange synthesis of CuIn_xGa_1−xSe₂ nanowires and their implementation in photovoltaic devices