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The interfacial electronic structure between a W-doped In 2 O 3 (IWO) transparent electrode and a V 2 O 5 hole injection layer (HIL) has been investigated using ultraviolet photoelectron spectroscopy for high-performance and inorganic quantum-dot light-emitting diodes (QLEDs). Based on the interfacial electronic structure measurements, we found gap states in a V 2 O 5 HIL at 1.0 eV below the Fermi level. Holes can be efficiently injected from the IWO electrode into poly[(9,9-dioctylfluorenyl-2,7-diyl)- co -(4,4'-(4- sec -butylphenyl)diphenylamine)] (TFB) through the gap states of V 2 O 5 , which was confirmed by the hole injection characteristics of a hole-only device. Therefore, conventional normal-structured QLEDs were fabricated on a glass substrate with the IWO transparent electrode and V 2 O 5 HIL. The maximum luminance of the device was measured as 9443.5 cd m -2 . Our result suggests that the IWO electrode and V 2 O 5 HIL are a good combination for developing high-performance and inorganic QLEDs.

rsc advances

Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes