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A detailed understanding of quantization conductance (QC), their correlationwith resistive switching phenomena and controlled manipulation of quantizedstates is crucial for realizing atomic-scale multilevel memory elements. Here,we demonstrate highly stable and reproducible quantized conductance states(QC-states) in Al/Niobium oxide/Pt resistive switching devices. Three levels ofcontrol over the QC-states, required for multilevel quantized state memories,like, switching ON to different quantized states, switching OFF from quantizedstates, and controlled inter-state switching among one QC states to another hasbeen demonstrated by imposing limiting conditions of stop-voltage and currentcompliance. The well defined multiple QC-states along with a working principlefor switching among various states show promise for implementation ofmultilevel memory devices.

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory