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Bulk 1T$^\prime$-MoTe$_2$ shows a structural phase transition from1T$^\prime$ to Weyl semimetallic (WSM) $ T_{d} $ phase at $\sim$ 240 K. Thisphase transition and transport properties in the two phases have not beeninvestigated on ultra-thin crystals. Here we report electrical transport, $1/f$noise and Raman studies in ultra-thin 1T$^\prime$-MoTe$_2$ ($\sim$ 5 to 16 nmthick) field-effect transistors (FETs) devices as a function of temperature.The electrical resistivities for thickness 16 nm and 11 nm show maxima attemperatures 208 K and 178 K, respectively, making a transition fromsemiconducting to semi-metallic phase, hitherto not observed in bulk samples.Raman frequencies and linewidths for 11nm thick crystal show change around 178K, attributed to additional contribution to the phonon self-energy due toenhanced electron-phonon interaction in the WSM phase. Further, the resistivityat low-temperature shows an upturn below 20 K along with the maximum in thepower spectral density of the low frequency $1/f$ noise. The latter rules outthe metal-insulator transition (MIT) being responsible for the upturn ofresistivity below 20 K. The low temperature resistivity follows $\rho \propto1/T$, changing to $\rho \propto T$ with increasing temperature supportselectron-electron interaction physics at electron-hole symmetric Weyl nodesbelow 20 K. These observations will pave the way to unravel the properties ofWSM state in layered ultra-thin van der Waals materials.

Thickness dependent transition from the 1T$^\prime$ to Weyl semimetal phase in ultrathin MoTe$ _{2} $: Electrical transport, Noise and Raman studies