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Tin(ii) oxide carbodiimide is a novel prospective semiconductor material with a band gap of 2.1 eV and lies chemically between metal oxides and metal carbodiimides. We report on the photochemical properties of this oxide carbodiimide and apply the material to form a heterojunction with CuWO 4 thin films for photoelectrochemical (PEC) water oxidation. Mott-Schottky experiments reveal that the title compound is an n-type semiconductor with a flat-band potential of -0.03 V and, as such, the position of the valence band edge would be suitable for photochemical water oxidation. Sn 2 O(NCN) increases the photocurrent of CuWO 4 thin films from 32 μA cm -2 to 59 μA cm -2 at 1.23 V vs. reversible hydrogen electrode (RHE) in 0.1 M phosphate buffer (pH 7.0) under backlight AM 1.5G illumination. This upsurge in photocurrent originates in a synergistic effect between the oxide and oxide carbodiimide, because the heterojunction photoanode displays a higher current density than the sum of its individual components. Structural analysis by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveals that Sn 2 O(NCN) forms a core-shell structure Sn 2 O(NCN)@SnPO x during the PEC water oxidation in phosphate buffer. The electrochemical activation is similar to the behavior of Mn(NCN) but different from Co(NCN).

Increased photocurrent of CuWO4 photoanodes by modification with the oxide carbodiimide Sn2O(NCN)

Increased photocurrent of CuWO₄ photoanodes by modification with the oxide carbodiimide Sn₂O(NCN)