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Transparent oxide semiconductors (TOSs) showing both high visibletransparency and high electron mobility have attracted great attention towardsthe realization of advanced optoelectronic devices. La-doped BaSnO3 (LBSO) isone of the most promising TOSs because its single crystal exhibits a highelectron mobility. However, in the LBSO films, it is very hard to obtain highmobility due to the threading dislocations, which are originated from thelattice mismatch between the film and the substrate. Therefore, manyresearchers have tried to improve the mobility by inserting a buffer layer.While the buffer layers increased the electron mobilities, this approach leavesmuch to be desired since it involves a two-step film fabrication process andthe enhanced mobility values are still significantly lower than single crystalvalues. We show herein that the electron mobility of LBSO films can be improvedwithout inserting any buffer layers if the films are grown under highlyoxidative ozone (O3) atmospheres. The O3 environments relaxed the LBSO latticeand reduced the formation of Sn2+ states, which are known to suppress theelectron mobility in LBSO. The resultant O3-LBSO films showed improved mobilityvalues up to 115 cm2 V-1 s-1, which is among the highest in LBSO films onSrTiO3 substrates and comparable to LBSO films with buffer layers.

Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3