English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Resistive switching memories allow electrical control of the conductivity ofa material, by inducing a high resistance (OFF) or a low resistance (ON) state,using electrochemical and ion transport processes. As alternative to hightemperature and vacuum-based physical sulphurization methods of silver (Ag),here we propose, as resistive switching medium, a layer built from colloidalAg$_{2-x}$S nanocrystals -compatible with solution-processed approaches. Theeffect of the electrode size (from macro- to micro-scale), composition (Ag, Tiand Pt) and geometry on the device performance together with theelectrochemical mechanisms involved are evaluated. We achieved an optimizedAg/Ti bowtie proof-of-concept configuration by e-beam lithography, whichfulfils the general requirements for ReRAM devices in terms of low powerconsumption and reliable $I_{ON}/I_{OFF}$ ratio. This configurationdemonstrates reproducible switching between ON and OFF states with dataendurance of at least 20 cycles; and an $I_{ON}/I_{OFF}$ ratio up to 10$^3$ atlow power consumption (0.1V readout), which outperforms previous results inliterature for devices with resistive layers fabricated from silverchalcogenide nanoparticles.

Solution-processed silver sulphide nanocrystal film for resistive switching memories