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A novel procedure, based in a closed space vapor transport (CSVT)configuration, has been devised to grow films or flakes of pure MoO2 in areductive atmosphere, at relatively low temperature and using MoO3 as thesource. In contrast with conventional CSVT technique, in the proposed method atemperature gradient is not required for the growth to take place, which occursthrough an intermediate volatile transport species that is produced in thecomplex reduction reaction of MoO3. An added value of this simple method is thepossibility of transforming the MoO2 into MoTe2, one of the most interestingmembers of the transition metal dichalcogenide family. This is achieved in asequential process that includes the growth of Mo oxide and its (in-situ)tellurization in two consecutive steps.

Chemically driven isothermal closed space vapor transport of MoO$_2$: thin films, flakes and in-situ tellurization