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Monoclinic BiVO 4 has been regarded as a promising photocatalyst for water splitting in recent years. In this research, the effects of Mo/W dopants near the surfaces of BiVO 4 on electron transport are investigated using first-principles calculations. We demonstrate that the additional electron introduced by Mo/W either in the bulk or near the surfaces forms a self-trapped small polaron. The polaron prefers to be localized on the transition metal ions in the subsurface layer when Mo/W is doped in the vicinity of the surfaces. The localized positions of polarons can be rationalized by the d-orbital energy levels of the transition metals and the variation of electrostatic potential. The concentrated electron polarons in the subsurface layer of BiVO 4 surfaces can build fast lanes for electron migration and mitigate the electron-hole recombination process, which underlines the importance of dopants near the surfaces as compared with those in the bulk.

Electron polarons in the subsurface layer of Mo/W-doped BiVO4 surfaces

Electron polarons in the subsurface layer of Mo/W-doped BiVO₄ surfaces