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In this work, a wide-range operating synaptic device based on organic ferroelectricity has been demonstrated. The device possesses a simple two-terminal structure by using a ferroelectric phase-separated polymer blend as the active layer and gold/indium tin oxide (ITO) as the top/bottom electrodes, and exhibits a distinctive history-dependent resistive switching behavior at room temperature. And the device with low energy consumption (∼50 fJ μm -2 per synaptic event) can provide a reliable synaptic function of potentiation, depression and the complex memory behavior simulation of differential responses to diverse stimulations. In addition, using simulations, the accuracy of 32 × 32 pixel image recognition is improved from 76.21% to 85.06% in the classical model Cifar-10 with 1024 levels of the device, which is an important step towards the higher performance goal in image recognition based on memristive neuromorphic networks.

A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption