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A strategy for self-rectifying memory diodes based on a polymer-carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10 3 in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping