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Two-dimensional (2D) materials with zero band gap exhibit remarkableelectronic properties with wide tunability. High harmonic generation (HHG) insuch materials offers unique platforms to develop novel optoelectronic devicesat nanoscale, as well as to investigate strong-field and ultrafast nonlinearbehaviour of massless Dirac fermions. However, control of HHG by modulatingelectronic structure of materials remains largerly unexplored to date. Here wereport controllable HHG by tuning the electronic structures via mechanicalengineering. Using an \textit{ab initio} approach based on time-dependentdensity-functional theory (TDDFT), we show that the HHG process is sensitive tothe modulation of band structures of monolayer silicene while preserving theDirac cones under biaxial and uniaxial strains, which can lead to significantenhancement of harmonic intensity up to an order of magnitude. With theadditional advantage of silicene in compatibility and integration into thecurrent silicon-based electronic industry, this study may open a new avenue todevelop efficient solid-state optoelectronic nano-devices, and provide avaluable tool to understand the strong-field and mechanically induced ultrafastnonlinear response of Dirac carriers in 2D materials.

Strain-controlled high harmonic generation with Dirac fermions in silicene