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Many applications for topological insulators (TIs) as well as new phenomenarequire devices with reduced dimensions. While much progress has been made torealize thin films of TIs with low bulk carrier density, nanostructures havenot yet been reported with similar properties, despite the fact that sizeconfinement should help reduce contributions from bulk carriers. Here wedemonstrate that Bi2Se3 nanoribbons, grown by a simple catalyst-freephysical-vapour deposition, have inherently low bulk carrier densities, and canbe further made bulk-free by size confinement, thus revealing the high mobilitytopological surface states. Magneto transport and Hall conductancemeasurements, in single nanoribbons, show that at thicknesses below 30nm thebulk transport is completely suppressed which is supported by self-consistentband-bending calculations. The results highlight the importance of materialgrowth and geometrical confinement to properly exploit the unique properties ofthe topological surface states.

Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States