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Graphene-silicon (GS) Schottky junctions have been demonstrated as anefficient architecture for photodetection. However, the response speed of suchdevices for free space light detection has so far been limited to 10's-100's ofkHz for wavelength $\lambda >$ 500nm. Here, we demonstrate graphene-siliconSchottky junction photodetectors fabricated on a silicon-on-insulator substrate(SOI) with response speeds approaching 1GHz, attributed to the reduction of thephoto-active silicon layer thickness to 10$\mu$m and with it a suppression ofspeed-limiting diffusion currents. Graphene-silicon-on-insulator photodetectors(GSOI-PDs) exhibit a negligible influence of wavelength on response speed andonly a modest compromise in responsivities compared to GS junctions fabricatedon bulk silicon. Noise-equivalent-power (NEP) and specific detectivity (D$^*$)of GSOI photodetectors are 14.5pW and 7.83$\times10^{\rm{10}}$ cmHz$^{\rm{1/2}}$W$^{\rm{-1}}$, respectively, in ambient conditions. We furtherdemonstrate that combining GSOI-PDs with micro-optical elements formed bymodifying the surface topography enables engineering of the spectral andangular response.

Graphene-Silicon-On-Insulator (GSOI) Schottky Diode Photodetectors