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Selenium and sulfur derivatives of lead(ii) acylchalcogourato complexes have been used to deposit PbSxSe1-x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1-x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N'-2-naphthoylthioureato]lead(ii) was solved and displayed the expected decreases in Pb-E bond lengths from the previously reported selenium variant.

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Full compositional control of PbS<sub>x</sub>Se<sub>1−x</sub> thin films by the use of acylchalcogourato lead(<scp>ii</scp>) complexes as precursors for AACVD

Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

Full compositional control of PbS_xSe_1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD