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Since the discovery of two-dimensional (2D) electron gas in LaAlO3/SrTiO3interface, 2D carrier gases in perovskite oxides have attracted great attentionbecause they can host many important phenomena and may produce novel functionaldevices. Here, we show that there is one pair of surface 2D electron and holegases in KTaO3 thin film and they can be tuned by applying biaxial stress. Forincreasing compressive in-plane strain, the 2D carrier concentrations decreasedown to zero, and then a new pair of surface 2D electron and hole gases areformed and the carrier signs are interchanged. Our analysis indicates that thiscarrier sign interchange happens because the increasing compressive strainreverses the slope of monolayer-resolved electrostatic potential along the[001] direction. Furthermore, we also present strain-dependent carrierconcentrations and effective masses and their thickness dependence, and showthat the surface 2D carrier gases and their strain-driven sign interchange canpersist even in the presence of overlayers and epitaxial substrates. Thesephenomena should be useful to design novel functional devices.

Strain-driven sign interchange of surface two-dimensional electron and hole gases in KTaO3 thin film