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Benefiting from the accelerative electron injection and retarded charge recombination, Zn–Cu–In–S alloy QD based QDSC achieved a PCE of 8.55%, which is 21%, and 82% higher than those of CIS/ZnS, and pristine CIS QDs based solar cells, respectively.

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells