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In this study, an investigation on the characterization of reduced graphene oxides (rGOs) prepared from natural graphites with different graphitization degrees using Hummers method was conducted. X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, atomic force microscopy and electrochemical performance were performed to characterize the as-prepared graphene oxides (GOs) and rGOs. The results demonstrate that graphites with a lower graphitization degree are more easily oxidized due to the active carbon atoms exposed on their edges and the effective diffusion of oxidants that intercalate into the graphitic layers. In addition, graphites with a low graphitization degree were more suitable for the synthesis of thin layer graphene with a high defect degree and small size in the in-plane sp2 domains as well as a relatively high specific capacitance.

Comparison of the characteristic properties of reduced graphene oxides synthesized from natural graphites with different graphitization degrees