English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A Ga-doped ZnO nanorod array has been synthesized on a pGaN/Al2O3 substrate by a hydrothermal method at low temperature. The structures and morphologies of the samples were measured by XRD and FE-SEM. The results show that the Ga-doped ZnO nanorods have excellent crystallinity and good epitaxial relationships with the substrate. With increasing Ga doping, the ZnO nanorods will grow along the [001] direction rapidly resulting in a decreasing average diameter. At the same time, the incorporation of Ga also signicantly affects the optical and electrical properties of the n-ZnO nanorods/p-GaN heterojunction light-emitting diode. From the photoluminescence spectrum, it was found that Ga doping can be effectively regulated by the UV and visible emission peak intensity ratio of the ZnO nanorods. The I–V characteristics curve indicates that the n-ZnO nanorods/p-GaN heterojunction light-emitting diode will have better conductivity with increasing Ga doping concentration. Finally, the heterojunction light-emitting diode achieves green light emission under forward bias.

Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

Effects of Ga_xZn_1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes