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Since graphene was successfully exfoliated, intercalation has been reviewed from bulk materials to two-dimensional counterparts. Here 1T phase Cu–TaS2 was successfully prepared via intercalating Cu into 2D layered TaS2 based on a solution method, which cannot damage the crystal structure of the target material and can realize uniform intercalation with a large amount of dopants. The electrical conductivity of 2D TaS2 intercalated by Cu has an obvious increase compared with 2D TaS2. Considering the peculiar metal–insulator transitions (MITs) of TaS2, our work may provide new opportunities for future superconductor and CDW-based memory devices.

Intercalating copper into layered TaS2 van der Waals gaps

Intercalating copper into layered TaS₂ van der Waals gaps