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The reshaping of amorphous SiOx nanowires (a-SiOx NWs) as purely induced byuniform electron beam (e-beam) irradiation was in-situ studied at roomtemperature in transmission electron microscope. It was observed that theaxially straight NW kept its perfect straight cylinder-like wire shape anddemonstrated a sequential uniform radial shrinkage with the increase ofirradiation time. In contrast, the axially curved NW turned straight quicklyaccompanied with a uniform axial shrinkage and a uniform radial expansionintriguingly. It is expected that such a study especially on the straighteningof axially curved NW has important implications for the nanoscale processingand stability of future NW-based structures or devices. More importantly, thefindings demonstrate that the traditional knock-on mechanism and electron beamheating effect are inadequate to explain these processes while our proposednanocurvature effect and energetic beam-induced athermal activation effectobviously dominate the processes.Comment: 14 pages, 3 figure

Uniform e-beam irradiation-induced athermal straightening of axially curved amorphous SiOx nanowires

Uniform e-beam irradiation-induced athermal straightening of axially curved amorphous SiO_x nanowires